Toshiba Semiconductor and Storage TW048N65C,S1F

TW048N65C-S1F Toshiba Semiconductor and Storage TW048N65C,S1F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
175°C
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 18 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 20A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
132W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1362 pF @ 400 V
standardLeadTime:
32 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TW048N65C,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 175°c operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 41 nc @ 18 v. It has a maximum Rds On and voltage of 65mohm @ 20a, 18v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tube. The product has a 650 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 132w (tc). The product's input capacitance at maximum includes 1362 pf @ 400 v. It has a long 32 weeks standard lead time. The product is available in through hole configuration. to-247 is the supplier device package value. The continuous current drain at 25°C is 40a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number

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