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This is manufactured by Goford Semiconductor. The manufacturer part number is G60N10T. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 146 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 25mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 160w (tc). The product's input capacitance at maximum includes 3970 pf @ 50 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. to-220 is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number
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