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This is manufactured by Goford Semiconductor. The manufacturer part number is GT52N10T. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 9mohm @ 50a, 10v. The maximum gate charge and given voltages include 44.5 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tube. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 227w. The product's input capacitance at maximum includes 2626 pf @ 50 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. to-220 is the supplier device package value. The continuous current drain at 25°C is 80a. This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number
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