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This is manufactured by Goford Semiconductor. The manufacturer part number is G58N06F. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 13mohm @ 30a, 10v. The maximum gate charge and given voltages include 75 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 44w (tc). The product's input capacitance at maximum includes 30006 pf @ 30 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. The product g, is a highly preferred choice for users. to-220f is the supplier device package value. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number
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