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This is manufactured by Goford Semiconductor. The manufacturer part number is G080P06M. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 7.5mohm @ 20a, 10v. The maximum gate charge and given voltages include 186 nc @ 10 v. The product is rohs compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr). The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 294w (tc). The product's input capacitance at maximum includes 15870 pf @ 30 v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. to-263 is the supplier device package value. The continuous current drain at 25°C is 195a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number
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