Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
50mA
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce:
225 @ 10mA, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 100µA, 1mA
Series:
Military, MIL-PRF-19500/376
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
360mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
2nA
Manufacturer:
Microsemi Corporation
