Dimensions:
39.37 x 26.67 x 8.51mm
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Cut-off Current:
1mA
Width:
26.67mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
12 A
Package Type:
TO-204
Number of Elements per Chip:
1
Maximum Operating Temperature:
+200 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Length:
39.37mm
Pin Count:
2
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Emitter Voltage:
100 V
Height:
8.51mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
24 Weeks
Base Part Number:
2N6052
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 12A 150W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 6A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 120mA, 12A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
150W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
12A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
