Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Saturation Voltage:
2 V dc
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V dc
Maximum Base Emitter Saturation Voltage:
2.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-218
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BDV65
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 20mA, 5A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
