Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
10 W
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
500 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
2 V
Height:
11mm
Width:
3.25mm
Length:
8mm
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Emitter Base Voltage:
7 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
19 Weeks
Base Part Number:
KSC2752
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 500mA 1W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 50mA, 5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 60mA, 300mA
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
