Minimum DC Current Gain:
10
Transistor Type:
PNP
Dimensions:
6.6 x 6.1 x 2.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
-1.2 V
Maximum Collector Base Voltage:
-100 V
Maximum Collector Emitter Voltage:
100 V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MJD32
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Surface Mount D-Pak
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Supplier Device Package:
D-Pak
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1.56W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
