Dimensions:
2.9 x 1.3 x 0.96mm
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Width:
1.3mm
Transistor Configuration:
Single
Maximum Operating Frequency:
300 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-160 V
Maximum Base Emitter Saturation Voltage:
-1 V
Maximum Emitter Base Voltage:
-5 V
Length:
2.9mm
Maximum DC Collector Current:
600 mA
Pin Count:
3
Minimum DC Current Gain:
50
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Voltage:
150 V
Height:
0.96mm
Minimum Operating Temperature:
-55 °C
Base Part Number:
MMBT5401
Detailed Description:
Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
Transistor Type:
PNP
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
150V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
