Manufacturer Standard Lead Time:
40 Weeks
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 20mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 4mA, 50mA
Series:
Military, MIL-PRF-19500/368
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
800mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
2µA
Manufacturer:
Microsemi Corporation
