Manufacturer Standard Lead Time:
40 Weeks
Current - Collector (Ic) (Max):
800mA
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Series:
Military, MIL-PRF-19500/255
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
500mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
50nA
Manufacturer:
Microsemi Corporation
