onsemi 2N6667G PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB

2N6667G onsemi  PNP Darlington Transistor, 10 A 60 V HFE:1000, 3-Pin TO-220AB
onsemi

Product Information

Minimum DC Current Gain:
1000
Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
4.5 V dc
Height:
15.75mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 3V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 100mA, 10A
REACH Status:
REACH Unaffected
Transistor Type:
PNP - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
2 W
Base Product Number:
2N6667
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Darlington Transistor 10 A 60 V HFE:1000 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is 2N6667G. The transistor is a pnp type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. In addition, the height is 15.75mm. Furthermore, the product is 4.82mm wide. Its accurate length is 10.28mm. Whereas, the minimum operating temperature of the product is -65 °c. It has a maximum operating temperature of +150 °c. The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. Furthermore, 1000 @ 5a, 3v is the minimum DC current gain at given voltage. The 3v @ 100ma, 10a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - darlington type. It is shipped in tube. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1ma is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to 2n6667, a base product number of the product. The product is designated with the ear99 code number

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Bipolar Power Transistor TO220 Pkg Assembly & Test 16/Oct/2015(PCN Assembly/Origin)
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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)
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Mult Dev EOL 08/Jul/2021(PCN Obsolescence/ EOL)
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2N6667,2N6668(Datasheets)

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