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This is manufactured by NXP USA Inc.. The manufacturer part number is PMDPB85UPE,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 8.1nc @ 4.5v. It has a maximum Rds On and voltage of 103mohm @ 1.3a, 4.5v. The continuous current drain at 25°C is 2.9a. The product is available in 2 p-channel (dual) configuration. It is shipped in bulk. The product has a 20v drain to source voltage. The product's input capacitance at maximum includes 514pf @ 10v. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 515mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdpb85, a base product number of the product. The product is designated with the ear99 code number
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