Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
120 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
167 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
1.05mm
Width:
5.1mm
Length:
6.1mm
Maximum Drain Source Resistance:
1.7 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
276 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 60V 38A (Ta) 3.9W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS5
Gate Charge (Qg) (Max) @ Vgs:
120nC @ 10V
Rds On (Max) @ Id, Vgs:
1.2mOhm @ 50A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
8900pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
38A (Ta)
Customer Reference:
Power Dissipation (Max):
3.9W (Ta), 200W (Tc)
Technology:
MOSFET (Metal Oxide)
