Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 4.5 V
Board Level Components:
Y
Channel Type:
P
Typical Input Capacitance @ Vds:
405 pF @ 10 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
31 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
±8 V
Height:
1.5mm
Typical Turn-On Delay Time:
6.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
130 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
130mOhm @ 3.5A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
405 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
