Dimensions:
2.92 x 1.3 x 1.2mm
Maximum Continuous Drain Current:
115 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Drain Source Resistance:
5 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Channel Type:
N
Typical Input Capacitance @ Vds:
50 pF @ 25 V
Length:
2.92mm
Pin Count:
3
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.2 W
Maximum Gate Source Voltage:
±20 V
Height:
1.2mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Current - Continuous Drain (Id) @ 25°C:
115mA (Tc)
Power Dissipation (Max):
200mW (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
