Category:
High Voltage
Dimensions:
10.36 x 4.9 x 16.07mm
Maximum Continuous Drain Current:
7.4 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
840 pF@ 25 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
39 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
28 W
Series:
SuperFET II
Maximum Gate Source Voltage:
30 V
Height:
16.07mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
600 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.7A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Power Dissipation (Max):
89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1120 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperFET® II
Supplier Device Package:
TO-220F-3
Current - Continuous Drain (Id) @ 25°C:
7.4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
