Category:
Power MOSFET
Dimensions:
10.67 x 11.33 x 4.83mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
11.33mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
42 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
959 pF @ 50 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
18.2 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.83mm
Typical Turn-On Delay Time:
6.6 ns
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
FDB861
Gate Charge (Qg) (Max) @ Vgs:
21nC @ 10V
Rds On (Max) @ Id, Vgs:
24mOhm @ 8.3A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1275pF @ 50V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263AB
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.3A (Ta), 30A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta)
Technology:
MOSFET (Metal Oxide)
