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This is manufactured by IXYS-RF. The manufacturer part number is IXFH12N50F. It has a maximum Rds On and voltage of 400mohm @ 6a, 10v. It features n-channel 500v 12a (tc) 180w (tc) through hole to-247 (ixfh). The product's input capacitance at maximum includes 1870pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5.5v @ 2.5ma. The product hiperrf™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 54nc @ 10v. to-247 (ixfh) is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 180w (tc). The product has a 500v drain to source voltage. The continuous current drain at 25°C is 12a (tc). This product use mosfet (metal oxide) technology. The ixys-rf's product offers user-desired applications.
For more information please check the datasheets.
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£ 0.000
