Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
4.2 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
20 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
4.7mm
Width:
10.16mm
Length:
28.85mm
Maximum Drain Source Resistance:
150 Ω
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
150Ohm @ 50mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
4.2 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta), 20W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
80 pF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDFPD1
ECCN:
EAR99
