Maximum Continuous Drain Current:
10 A
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Length:
6.8mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
83 W
Maximum Gate Source Voltage:
±30 V
Height:
6.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
360 mΩ
Mounting Type:
Through Hole
HTSUS:
8541.29.0095
Package:
Tube
Series:
SuperFET® III
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Moisture Sensitivity Level (MSL):
Not Applicable
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Base Product Number:
FCU360
Package / Case:
TO-251-3 Stub Leads, IPak
ECCN:
EAR99
