ON Semiconductor FGL35N120FTDTU

FGL35N120FTDTU ON Semiconductor
FGL35N120FTDTU
ON Semiconductor

Product Information

Dimensions:
20.2 x 5.2 x 26.4mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
368 W
Maximum Continuous Collector Current:
70 A
Maximum Collector Emitter Voltage:
1200 V
Height:
26.4mm
Width:
5.2mm
Length:
20.2mm
Maximum Gate Emitter Voltage:
±25V
Package Type:
TO-264
Minimum Operating Temperature:
-55 °C
Switching Speed:
1MHz
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
70A
Detailed Description:
IGBT Trench Field Stop 1200V 70A 368W Through Hole TO-264-3
Vce(on) (Max) @ Vge, Ic:
2.2V @ 15V, 35A
Td (on/off) @ 25°C:
34ns/172ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Type:
Standard
Package / Case:
TO-264-3, TO-264AA
Gate Charge:
210nC
Base Part Number:
FGL35N120
Voltage - Collector Emitter Breakdown (Max):
1200V
Reverse Recovery Time (trr):
337ns
Switching Energy:
2.5mJ (on), 1.7mJ (off)
Test Condition:
600V, 35A, 10Ohm, 15V
Manufacturer:
ON Semiconductor
IGBT Type:
Trench Field Stop
Current - Collector Pulsed (Icm):
105A
Mounting Type:
Through Hole
Supplier Device Package:
TO-264-3
Packaging:
Tube
Power - Max:
368W
Customer Reference:
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FGL35N120FTDTU. The given dimensions of the product include 20.2 x 5.2 x 26.4mm. The product is available in through hole configuration. In addition, the height is 26.4mm. Furthermore, the product is 5.2mm wide. Its accurate length is 20.2mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. The maximum collector current includes 70a. It features igbt trench field stop 1200v 70a 368w through hole to-264-3. Features 2.2v @ 15v, 35a. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in [Package/ Case]. Base Part Number: fgl35n120. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 337ns. Test condition included 600v, 35a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT trench field stop type. to-264-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 368w.

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FGL35N120FTD, 1200V 35A Field Stop Trench IGBT Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Assem/Material Chg 10/Oct/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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FGL35N120FTD(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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