Category:
Power MOSFET
Dimensions:
6.73 x 2.41 x 6.22mm
Maximum Continuous Drain Current:
7.3 A
Transistor Material:
Si
Width:
2.41mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
2.9V
Package Type:
TO-251
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC
Channel Type:
N
Typical Input Capacitance @ Vds:
790 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
6S
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±30 V
Height:
6.22mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
600 mΩ
