Category:
Power MOSFET
Dimensions:
3.4 x 3.4 x 1.1mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
TDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
320 pF @ 100 V
Length:
3.4mm
Pin Count:
8
Forward Transconductance:
7S
Typical Turn-Off Delay Time:
6 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
34 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
225 mΩ
