Category:
Power MOSFET
Maximum Continuous Drain Current:
429 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
24 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7700 pF@ 19
Pin Count:
7
Typical Turn-Off Delay Time:
86 ns
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.55mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1 mΩ
