Vishay SI1912EDH-T1-E3 Dual N-channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363

Vishay

Product Information

Category:
Power MOSFET
Maximum Drain Source Voltage:
20 V
Typical Turn-Off Delay Time:
350 ns
Dimensions:
2.05 x 1.25 x 0.9mm
Channel Mode:
Enhancement
Typical Turn-On Delay Time:
45 ns
Maximum Gate Source Voltage:
±12 V
Height:
0.9mm
Width:
1.25mm
Length:
2.05mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.13 A
Minimum Gate Threshold Voltage:
0.45V
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
RoHs Compliant
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This is Dual N-channel MOSFET Transistor 1.13 A 20 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI1912EDH-T1-E3. The given dimensions of the product include 2.05 x 1.25 x 0.9mm. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2.05mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Trans MOSFET N-CH 20V 1.13A 6-Pin(Technical Reference)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14080526 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number SI1912EDH-T1-E3.
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