Category:
Power MOSFET
Dimensions:
10.36 x 4.52 x 9.45mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
4.52mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
560 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
95 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2400 pF @ 25 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
67 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.45mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
