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Showing Results For: Transistors - Bipolar (BJT) - RF

Transistors - Bipolar (BJT) - RF

Enrgtech offers a wide variety of high-quality transistor bipolar (BJT) rf products at fabulous prices with same-day shipping. 

Bipolar transistors are solid state devices made from three silicon layers and consist of three pins. A bipolar transistor is a device that can be used for the switching or modification of current. The two main types of transistors are known as:

  • Positive negative-positive (PNP)
  • Negative Positive-Negative (NPN)

Functions

Switching and amplification are the two functions of bipolar transistors. Because these transistors have a three-layer silicon construction, the transistor is given a signal voltage that allows the discrete components to act as a conductor or an insulator. As this change occurs, the transistors can perform two functions which are switching and amplification electronics. Transistors are available in three options: panel, surface, and through-hole mounting, which comes in either metal packaging or tin cans. There are two more transistors available known as:

UJT transistors: These are constructed from a bar of Lightly doped N-type silicon and a heavily doped P-type material attached to one side. UJT transistors have resistance because of the lightly doped silicon bar.

Digital Transistors: These transistors are usually made from a semiconductor material, typically silicon, due to which it conducts electricity with less resistance. Additionally, they tend to have at least three terminals for easy connection to an external circuit. 

Construction

Transistor Bipolar BJT is constructed when two junction diodes are connected back-to-back in series form, creating a PN junction that shares a common N or P terminal. It is known that silicon is not a good electricity conductor. However, when this silicon is treated specifically with some chemicals, the electrons and the materials tend to behave differently. This process is known as doping, through which the ability of semiconductors to conduct electricity is improved.


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Rohs Verified
NSVF4020SG4T1G, onsemi
1602 In Stock
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50 +
£ 0.65
100 +
£ 0.48
500 +
£ 0.41
ON Semiconductor
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MMBTH10LT1G, ON Semiconductor
10933 In Stock
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3000 +
£ 0.040
ON Semiconductor
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2SC5347AE-TD-E, ON Semiconductor
998 In Stock
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1000 +
£ 0.12
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NSVF4020SG4T1G, onsemi

NSVF4020SG4T1G, onsemi

This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is PPAP capable for automotive applications. Low-noise use : NF = 1.2 dB (typ) [f = 1 GHz] Realize the clear signal amplification High cut-off frequency : fT = 8 GHz (typ) [VCE = 5 V] Available for high frequency application High gain : |S21e|2 = 12 dB (typ) [f = 1 GHz] Useful for the reception of the small signal PPAP capable Suitable for automotive application MCPH3 package is pin-compatible with SC-70FL Reduce PCB mount area Pb-Free and Halogen Free Environmental consideration Low current operating Useful for long lifetime of the battery Low Noise Amplifier RF Amplifier FM Radio Antenna Remote Keyless Entry System (RKE) ADAS
New items
MMBTH10LT1G, ON Semiconductor

MMBTH10LT1G, ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23
New items
2SC5347AE-TD-E, ON Semiconductor
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