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Showing Results For: Transistors - Bipolar (BJT) - RF

Transistors - Bipolar (BJT) - RF

Enrgtech offers a wide variety of high-quality transistor bipolar (BJT) rf products at fabulous prices with same-day shipping. 

Bipolar transistors are solid state devices made from three silicon layers and consist of three pins. A bipolar transistor is a device that can be used for the switching or modification of current. The two main types of transistors are known as:

  • Positive negative-positive (PNP)
  • Negative Positive-Negative (NPN)

Functions

Switching and amplification are the two functions of bipolar transistors. Because these transistors have a three-layer silicon construction, the transistor is given a signal voltage that allows the discrete components to act as a conductor or an insulator. As this change occurs, the transistors can perform two functions which are switching and amplification electronics. Transistors are available in three options: panel, surface, and through-hole mounting, which comes in either metal packaging or tin cans. There are two more transistors available known as:

UJT transistors: These are constructed from a bar of Lightly doped N-type silicon and a heavily doped P-type material attached to one side. UJT transistors have resistance because of the lightly doped silicon bar.

Digital Transistors: These transistors are usually made from a semiconductor material, typically silicon, due to which it conducts electricity with less resistance. Additionally, they tend to have at least three terminals for easy connection to an external circuit. 

Construction

Transistor Bipolar BJT is constructed when two junction diodes are connected back-to-back in series form, creating a PN junction that shares a common N or P terminal. It is known that silicon is not a good electricity conductor. However, when this silicon is treated specifically with some chemicals, the electrons and the materials tend to behave differently. This process is known as doping, through which the ability of semiconductors to conduct electricity is improved.


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Central Semiconductor Corp
2N5179 PBFREE, Central Semiconductor Corp
1178 In Stock
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1 +
£ 11.58
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£ 10.41
100 +
£ 8.53
Panasonic Electronic Components
DSC9F0100L, Panasonic Electronic Components
50 In Stock
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£ 0.70
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£ 0.60
25 +
£ 0.56
MCH4015-TL-H, onsemi
3513 In Stock
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£ 0.88
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£ 0.75
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£ 0.56
Rohs Verified
NSVF4017SG4T1G, onsemi
1954 In Stock
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3000 +
£ 0.11
9000 +
£ 0.11
24000 +
£ 0.11
Central Semiconductor Corp
2N5770 PBFREE, Central Semiconductor Corp
48822 In Stock
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£ 0.98
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£ 0.80
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£ 0.54
Central Semiconductor Corp
CMPT918 TR PBFREE, Central Semiconductor Corp
3469 In Stock
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£ 1.55
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£ 1.35
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£ 1.04
2SC5347AF-TD-E, onsemi
59 In Stock
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£ 1.33
10 +
£ 1.17
Renesas Electronics America Inc.
HFA3102BZ96, Renesas Electronics America Inc.
2498 In Stock
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£ 17.85
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£ 16.13
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£ 15.37
Renesas Electronics America Inc.
HFA3134IHZ96, Renesas Electronics America Inc.
12365 In Stock
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3000 +
£ 10.50
Rohs Verified
NSVF4020SG4T1G, onsemi
1602 In Stock
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£ 0.58
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£ 0.43
500 +
£ 0.37
Infineon Technologies
BFP193E6327, Infineon Technologies
4758 In Stock
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3355 +
£ 0.19
Renesas Electronics America Inc
HFA3102BZ, Renesas Electronics America Inc
989 In Stock
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1000 +
£ 12.53
Central Semiconductor Corp
2N2857 PBFREE, Central Semiconductor Corp
2758 In Stock
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£ 14.55
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£ 13.16
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£ 10.90
Central Semiconductor Corp
CMUT5179 TR PBFREE, Central Semiconductor Corp
2767 In Stock
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£ 2.18
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£ 1.96
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£ 1.53
Panasonic Electronic Components
2SC5632G0L, Panasonic Electronic Components
2988 In Stock
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£ 0.33
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£ 0.28
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£ 0.27
MCH4009-TL-H, onsemi
3012 In Stock
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£ 1.18
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£ 0.99
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£ 0.74
Renesas Electronics America Inc
NESG2101M05-T1-A, Renesas Electronics America Inc
8998 In Stock
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601 +
£ 1.04
Renesas Electronics America Inc.
HFA3096BZ, Renesas Electronics America Inc.
8962 In Stock
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£ 25.80
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£ 23.31
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£ 19.30
Central Semiconductor Corp
2N918 PBFREE, Central Semiconductor Corp
1629 In Stock
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£ 13.30
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£ 12.01
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£ 9.95
Infineon Technologies
BFP450, Infineon Technologies
118869 In Stock
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1501 +
£ 0.42
Diodes Incorporated
BFS17NTA, Diodes Incorporated
55679 In Stock
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£ 0.80
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£ 0.71
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£ 0.66
Central Semiconductor Corp
BFY90 PBFREE, Central Semiconductor Corp
3209 In Stock
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£ 14.55
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£ 13.16
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£ 10.90
NSVF4009SG4T1G, onsemi
111 In Stock
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£ 1.00
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£ 0.86
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£ 0.80
Diodes Incorporated
ZUMTS17NTA, Diodes Incorporated
3977 In Stock
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£ 1.03
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£ 0.83
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£ 0.76
Renesas Electronics America Inc.
HFA3096BZ96, Renesas Electronics America Inc.
2555 In Stock
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£ 24.35
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£ 21.99
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£ 20.97
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New Items
New items
NSVF4020SG4T1G, onsemi

NSVF4020SG4T1G, onsemi

This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is PPAP capable for automotive applications. Low-noise use : NF = 1.2 dB (typ) [f = 1 GHz] Realize the clear signal amplification High cut-off frequency : fT = 8 GHz (typ) [VCE = 5 V] Available for high frequency application High gain : |S21e|2 = 12 dB (typ) [f = 1 GHz] Useful for the reception of the small signal PPAP capable Suitable for automotive application MCPH3 package is pin-compatible with SC-70FL Reduce PCB mount area Pb-Free and Halogen Free Environmental consideration Low current operating Useful for long lifetime of the battery Low Noise Amplifier RF Amplifier FM Radio Antenna Remote Keyless Entry System (RKE) ADAS
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MMBTH10LT1G, ON Semiconductor

MMBTH10LT1G, ON Semiconductor

TRANS SS VHF MIXER NPN 25V SOT23
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ON5088,115, NXP Semiconductors

ON5088,115, NXP Semiconductors

ON5088 - NPN WIDEBAND SILICON GE
New items
PBR941, NXP Semiconductors

PBR941, NXP Semiconductors

RF SMALL SIGNAL BIPOLAR TRANSIST
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BFR35AP, Infineon Technologies

BFR35AP, Infineon Technologies

BFR35 - LOW-NOISE SI TRANSISTORS
New items
55GN01MA-TL-E, onsemi

55GN01MA-TL-E, onsemi

RF TRANS NPN 10V 5.5GHZ 3MCP
New items
2N5179 PBFREE, Central Semiconductor Corp
New items
DSC9F0100L, Panasonic Electronic Components
New items
MCH4015-TL-H, onsemi

MCH4015-TL-H, onsemi

RF TRANS NPN 12V 10GHZ 4MCPH
New items
NSVF4017SG4T1G, onsemi

NSVF4017SG4T1G, onsemi

This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is PPAP capable for automotive applications. Features: Low-noise use : NF = 1.2 dB typ. (f = 1 GHz) High cut-off frequency : fT = 10 GHz typ. (VCE = 5 V) High gain : |S21e|2= 17 dB typ. (f = 1 GHz) MCPH4 package is pin-compatible with SC-82FL PPAP capable Pb-Free, Halogen Free Applications: Low Noise Amplifier RF Amplifier Benefits: Realize the clear signal amplification Available for high frequency application Useful for the reception of the small signal Reduce PCB mount area Suitable for automotive application Environmental consideration End Products: Digital Radio Systems Digital TVs FM Radio Systems UHF Applications
New items
2N5770 PBFREE, Central Semiconductor Corp
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