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This is ON Semiconductor 3 Phase IGBT Module 35 A 650 V DIP26 Through Hole manufactured by onsemi. The manufacturer part number is NXH50C120L2C2ESG. The product is available in through hole configuration. The product is available in [Cannel Type] channel. The product is available in 3 phase configuration. The maximum collector current includes 50 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.4v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 1200 v. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. Its input values include three phase bridge rectifier. In addition, it is reach unaffected. The product is available in three phase inverter with brake configuration. It is shipped in tube. Its typical moisture sensitivity level is not applicable. It has a long 62 weeks standard lead time. In addition, 250 µa is the maximum current at collector cutoff. 26-dip is the supplier device package value. The maximum power of the product is 20 mw. Moreover, it corresponds to nxh50, a base product number of the product. The product is designated with the ear99 code number
For more information please check the datasheets.
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