Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
5.1 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
99 mΩ
Package Type:
MCPH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Base Part Number:
MCH6421
Detailed Description:
N-Channel 20V 5.5A (Ta) 1.5W (Ta) Surface Mount 6-MCPH
Input Capacitance (Ciss) (Max) @ Vds:
410pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.3V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
5.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
38mOhm @ 2A, 4.5V
Supplier Device Package:
6-MCPH
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
6-SMD, Flat Leads
Power Dissipation (Max):
1.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
