Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.1 nC @ 4.5 V, 1.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Maximum Drain Source Resistance:
2 Ω, 900 mΩ
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
450 mA, 570 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTZD3155
Detailed Description:
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
550mOhm @ 540mA, 4.5V
Supplier Device Package:
SOT-563
Manufacturer Standard Lead Time:
51 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
250mW
Current - Continuous Drain (Id) @ 25°C:
540mA, 430mA
Manufacturer:
ON Semiconductor
