Infineon IPB120N06S403ATMA2 N-channel MOSFET, 120 A, 60 V OptiMOS T2, 3-Pin D2PAK

IPB120N06S403ATMA2 Infineon  N-channel MOSFET, 120 A, 60 V OptiMOS T2, 3-Pin D2PAK
IPB120N06S403ATMA2
Infineon

Product Information

Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
125 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
167 W
Series:
OptiMOS T2
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.2 mΩ
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This is N-channel MOSFET 120 A 60 V OptiMOS T2 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB120N06S403ATMA2. Furthermore, the product is 9.25mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in surface mount configuration. The product optimos t2, is a highly preferred choice for users. In addition, the height is 4.4mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IPB120N06S4-03, IPI120N06S4-03, IPP120N06S4-03, OptiMOS-T2 Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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