Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.2 nC @ 10 V, 1.9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
340 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Minimum Gate Threshold Voltage:
0.6V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
400 mA, 700 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
1.48 Ω, 578 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
