Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V, 14 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.1 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1V
Height:
0.9mm
Width:
1.65mm
Length:
2.95mm
Maximum Drain Source Resistance:
56 mΩ, 168 mΩ
Package Type:
TSOT-26
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.1 A, 5.2 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
