Infineon SPP80P06PHXKSA1 P-channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin TO-220

SPP80P06PHXKSA1 Infineon  P-channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin TO-220
SPP80P06PHXKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
115 nC @ 10 V
Channel Type:
P
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
340 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.6V
Maximum Drain Source Resistance:
23 mΩ
RoHs Compliant
Checking for live stock

This is P-channel MOSFET 80 A 60 V SIPMOS 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is SPP80P06PHXKSA1. Furthermore, the product is 4.57mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. The product is available in through hole configuration. The product sipmos, is a highly preferred choice for users. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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