Diodes Inc DMT6016LSS-13 N-channel MOSFET, 11.9 A, 60 V, 8-Pin SOIC

DMT6016LSS-13 Diodes Inc  N-channel MOSFET, 11.9 A, 60 V, 8-Pin SOIC
DiodesZetex

Product Information

Maximum Continuous Drain Current:
11.9 A
Transistor Material:
Si
Width:
3.95mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Length:
4.95mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
28 mΩ
RoHs Compliant
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This is Diodes Inc N-channel MOSFET 11.9 A 60 V 8-Pin SOIC manufactured by DiodesZetex. The manufacturer part number is DMT6016LSS-13. Furthermore, the product is 3.95mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 4.95mm. The product is available in surface mount configuration. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c.

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DMT6016LSS, 60V N-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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