Nexperia PMGD290XN,115 Dual N-channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363

PMGD290XN-115 Nexperia PMGD290XN,115 Dual N-channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363
Nexperia

Product Information

Maximum Continuous Drain Current:
860 mA
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.72 nC @ 4.5 V
Channel Type:
N
Length:
2.2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
410 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
350 mΩ
RoHs Compliant
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This is Dual N-channel MOSFET 860 mA 20 V 6-Pin SOT-363 manufactured by Nexperia. The manufacturer part number is PMGD290XN,115. Furthermore, the product is 1.35mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 2.2mm. The product is available in surface mount configuration. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Trans MOSFET NCH 20V 0.86A 6Pin UMT(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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