Vishay SIHLR120TR-GE3 N-channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK

SIHLR120TR-GE3 Vishay  N-channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK
SIHLR120TR-GE3
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
12 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Minimum Gate Threshold Voltage:
1V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
7.7 A
Transistor Material:
Si
Maximum Drain Source Resistance:
380 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 7.7 A 100 V 3-Pin DPAK manufactured by Vishay. The manufacturer part number is SIHLR120TR-GE3. The product is available in surface mount configuration. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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IRLR120, IRLU120, SiHLR120, SiHLU120, Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Vishay SIHLR120TR-GE3 N-channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Vishay SIHLR120TR-GE3 N-channel MOSFET, 7.7 A, 100 V, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13842361 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number SIHLR120TR-GE3.
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