Maximum Drain Source Voltage:
12 V
Typical Gate Charge @ Vgs:
13.1 nC @ 8 V, 9.7 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
6.5 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.8mm
Width:
2.15mm
Length:
2.15mm
Minimum Gate Threshold Voltage:
0.4V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.3 A, 4.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
65 mΩ, 170 mΩ
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
