Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
1.8 nC @ 5 V, 3.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
806 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1mm
Width:
1.4mm
Length:
3.05mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
700 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
