Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
3.2 nC @ 10 V, 5.1 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.36 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
350 mΩ
Package Type:
SOIC
Number of Elements per Chip:
4
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.4 A, 1.8 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Full Bridge
