Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.4 nC @ 4.5 V, 0.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
+8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.45mm
Width:
0.85mm
Length:
1.05mm
Maximum Drain Source Resistance:
2.4 Ω, 5 Ω
Package Type:
SOT-963
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
190 mA, 520 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
