Diodes Inc DMP21D0UFB4-7B P-channel MOSFET, 1.17 A, 20 V, 3-Pin X2-DFN1006

DMP21D0UFB4-7B Diodes Inc  P-channel MOSFET, 1.17 A, 20 V, 3-Pin X2-DFN1006
DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.5 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
990 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.35mm
Width:
0.65mm
Length:
1.05mm
Maximum Drain Source Resistance:
960 mΩ
Package Type:
X2-DFN1006
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.17 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 1.17 A 20 V 3-Pin X2-DFN1006 manufactured by DiodesZetex. The manufacturer part number is DMP21D0UFB4-7B. The product is available in surface mount configuration. In addition, the height is 0.35mm. Furthermore, the product is 0.65mm wide. Its accurate length is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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DMP21D0UFB4, 20V P-Channel Enhancement Mode MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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