Infineon IRLU3110ZPBF N-channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK

IRLU3110ZPBF Infineon  N-channel MOSFET, 63 A, 100 V HEXFET, 3-Pin IPAK
IRLU3110ZPBF
Infineon

Product Information

Maximum Continuous Drain Current:
63 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
34 nC @ 4.5 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
140 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
6.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
14 mΩ
RoHs Compliant
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This is N-channel MOSFET 63 A 100 V HEXFET 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IRLU3110ZPBF. Furthermore, the product is 2.3mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 6.1mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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