Infineon IRLL014NPBF N-channel MOSFET, 2.8 A, 55 V HEXFET, 3+Tab-Pin SOT-223

IRLL014NPBF Infineon  N-channel MOSFET, 2.8 A, 55 V HEXFET, 3+Tab-Pin SOT-223
IRLL014NPBF
Infineon

Product Information

Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.5 nC @ 10 V
Channel Type:
N
Length:
6.7mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.1 W
Series:
HEXFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
1.7mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
140 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 2.8 A 55 V HEXFET 3+Tab-Pin SOT-223 manufactured by Infineon. The manufacturer part number is IRLL014NPBF. Furthermore, the product is 3.7mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.7mm. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -55 °c.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET13874838 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number IRLL014NPBF.
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