Vishay SI7501DN-T1-E3 Dual N/P-channel MOSFET Transistor, 5.4 A, 30 V, 8-Pin PowerPAK 1212

SI7501DN-T1-E3 Vishay  Dual N/P-channel MOSFET Transistor, 5.4 A, 30 V, 8-Pin PowerPAK 1212
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
12.5 nC @ 10 V, 9 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W
Maximum Gate Source Voltage:
-25 V, -20 V, +20 V, +25 V
Height:
1.04mm
Width:
3.05mm
Length:
3.05mm
Maximum Drain Source Resistance:
35 mΩ, 51 mΩ
Package Type:
PowerPAK 1212
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
5.4 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
RoHs Compliant
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This is Dual N/P-channel MOSFET Transistor 5.4 A 30 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SI7501DN-T1-E3. The product is available in surface mount configuration. In addition, the height is 1.04mm. Furthermore, the product is 3.05mm wide. Its accurate length is 3.05mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

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Si7501DN Complementary 30-V (D-S) MOSFET Data Sheet(Technical Reference)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET13883943 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search"Vishay" products on our website by using Enrgtech's Unique Manufacturing Part Number SI7501DN-T1-E3.
Yes. You can also search SI7501DN-T1-E3 on website for other similar products.
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