Wolfspeed C3M0280090D N-channel SiC MOSFET, 11.5 A, 900 V, 3-Pin TO-247

C3M0280090D Wolfspeed  N-channel SiC MOSFET, 11.5 A, 900 V, 3-Pin TO-247
C3M0280090D
Wolfspeed

Product Information

Maximum Continuous Drain Current:
11.5 A
Transistor Material:
SiC
Width:
21.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.5 nC @ 15 V
Channel Type:
N
Length:
16.13mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
54 W
Maximum Gate Source Voltage:
-8 V, +18 V
Height:
5.21mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
4.8V
Maximum Drain Source Resistance:
360 mΩ
RoHs Compliant
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This is N-channel SiC MOSFET 11.5 A 900 V 3-Pin TO-247 manufactured by Wolfspeed. The manufacturer part number is C3M0280090D. Furthermore, the product is 21.1mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 16.13mm. The product is available in through hole configuration. In addition, the height is 5.21mm. Whereas, the minimum operating temperature of the product is -55 °c.

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C3M0280090D Silicon Carbide Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Wolfspeed C3M0280090D N-channel SiC MOSFET, 11.5 A, 900 V, 3-Pin TO-247. You can also check on our website or by contacting our customer support team for further order details on Wolfspeed C3M0280090D N-channel SiC MOSFET, 11.5 A, 900 V, 3-Pin TO-247.
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