Wolfspeed C3M0065090J N-channel SiC MOSFET, 35 A, 900 V, 7-Pin D2PAK

Wolfspeed

Product Information

Maximum Continuous Drain Current:
35 A
Transistor Material:
SiC
Width:
10.99mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 15 V
Channel Type:
N
Length:
10.23mm
Pin Count:
7
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
113 W
Maximum Gate Source Voltage:
+25 V
Height:
4.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
4.4V
Maximum Drain Source Resistance:
78 mΩ
RoHs Compliant
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This is N-channel SiC MOSFET 35 A 900 V 7-Pin D2PAK manufactured by Wolfspeed. The manufacturer part number is C3M0065090J. Furthermore, the product is 10.99mm wide. It has a maximum operating temperature of +150 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.23mm. The product is available in surface mount configuration. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c.

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C3M0065090J Silicon Carbide Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Wolfspeed C3M0065090J N-channel SiC MOSFET, 35 A, 900 V, 7-Pin D2PAK. You can also check on our website or by contacting our customer support team for further order details on Wolfspeed C3M0065090J N-channel SiC MOSFET, 35 A, 900 V, 7-Pin D2PAK.
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